| PART |
Description |
Maker |
| KM616U4000BZ |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| LP62S16256G |
256K X 16-Bit Low Voltage CMOS SRAM
|
AMIC Technology
|
| EM640FU16E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6F2008T2E |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| EM640FV16FW |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| BS62LV2003TI BS62LV2003 BS62LV2003SC BS62LV2003SI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM6320FP32AW-70L EM6320FP32AW-70LF EM6320FP32AW12L |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
